Semiconductor device and manufacturing method thereof

In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generat...

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Main Authors KOBAYASHI HIROTAKA, OYU KIYONORI, HAMADA KOJI, OKONOGI KENSUKE
Format Patent
LanguageEnglish
Published 23.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.
AbstractList In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.
Author OYU KIYONORI
KOBAYASHI HIROTAKA
OKONOGI KENSUKE
HAMADA KOJI
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Snippet In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device and manufacturing method thereof
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