Method and apparatus for atomic layer deposition (ALD) in a proximity system

• Main Authors: KOROLIK MIKHAIL, WILCOXSON MARK, RAVKIN MIKE
• Format: Patent
• Language: English
• Published: 15.12.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate. The apparatus further includes a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate. The apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation.