Semiconductor device having strain-inducing substrate and fabrication methods thereof
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate regi...
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Main Author | |
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Format | Patent |
Language | English |
Published |
20.10.2009
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Subjects | |
Online Access | Get full text |
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