Method of depositing a sculptured copper seed layer
A method of applying a sculptured copper seed layer on a semiconductor feature surface using ion deposition sputtering. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate b...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
15.09.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A method of applying a sculptured copper seed layer on a semiconductor feature surface using ion deposition sputtering. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. |
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Bibliography: | Application Number: US20080075355 |