Method of measuring thin layers using SIMS

A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which c...

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Bibliographic Details
Main Authors SIELOFF DAVID D, JIANG ZHI-XIONG (JACK)
Format Patent
LanguageEnglish
Published 25.08.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which contains a second isotope and exposing a portion of the second layer; and (c) determining (105) the thickness of the first layer by measuring the amount of the second isotope which is sputtered off.
Bibliography:Application Number: US20070888576