Ion implantation apparatus and method for obtaining non-uniform ion implantation energy

An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period...

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Bibliographic Details
Main Authors JUNG MIN YONG, JIN SEUNG WOO, ROUH KYOUNG BONG, JUNG YONG SOO
Format Patent
LanguageEnglish
Published 18.08.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.
Bibliography:Application Number: US20060445542