Gan-based and ZnO-based LED

Light emitting diodes (LEDs) with various electrode structures which preferably provide increased performance. In some embodiments the LEDs are GaN-based and in some embodiments the LEDs are ZnO-based, with a sapphire substrate or a ZnO substrate. In some embodiments the LEDs are hybrid GaN-based Zn...

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Bibliographic Details
Main Authors ZHAO YONGSHENG, CHOI CHAN KYUNG, SONG JIN-JOO
Format Patent
LanguageEnglish
Published 28.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Light emitting diodes (LEDs) with various electrode structures which preferably provide increased performance. In some embodiments the LEDs are GaN-based and in some embodiments the LEDs are ZnO-based, with a sapphire substrate or a ZnO substrate. In some embodiments the LEDs are hybrid GaN-based ZnO based LEDs.
Bibliography:Application Number: US20050291079