Partial ion implantation apparatus and method using bundled beam

An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion be...

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Bibliographic Details
Main Authors JIN SEUNG WOO, ROUH KYOUNG BONG, JUNG YONG SOO, LEE MIN YONG
Format Patent
LanguageEnglish
Published 30.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.
Bibliography:Application Number: US20060445643