Method for making ohmic contact to silicon structures with low thermal loads

An ohmic contact for a silicon slider body is disclosed. A scanned laser beam locally heats a metal film on the slider body to interdiffuse the metal and silicon while minimizing the total thermal load on the slider body. This localized heating avoids thermal damage to the sensitive magnetic head re...

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Bibliographic Details
Main Authors STRAND TIMOTHY CARL, REILEY TIMOTHY CLARK
Format Patent
LanguageEnglish
Published 30.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:An ohmic contact for a silicon slider body is disclosed. A scanned laser beam locally heats a metal film on the slider body to interdiffuse the metal and silicon while minimizing the total thermal load on the slider body. This localized heating avoids thermal damage to the sensitive magnetic head region on the slider. The native oxide layer on the slider is removed by a sputter etch, followed by deposition of a diffusion layer. A capping layer is then deposited to reduce oxidation during subsequent processing. The metal layer is then locally annealed by scanning the laser beam over the target area. Contact resistance of less than 100 ohms is achieved while minimizing the thermal load on the slider body.
Bibliography:Application Number: US20050120820