Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a...

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Main Authors KAWASAKI ATSUKO, KIYOTOSHI MASAHIRO, UMEZAWA KAORI, HOSHI TAKESHI, OGAWA YOSHIHIRO, ONO TAKATOSHI
Format Patent
LanguageEnglish
Published 26.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.
Bibliography:Application Number: US20060451519