Variable overlap of dummy shapes for improved rapid thermal anneal uniformity

Embodiments of the invention provide a method, structure, service, etc. for variable overlap of dummy shapes for improved rapid thermal anneal uniformity. A method of providing uniform temperatures across a limited region of a wafer during a rapid thermal anneal process comprises determining a first...

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Bibliographic Details
Main Authors NOWAK EDWARD J, ANDERSON BRENT A, LANDIS HOWARD S
Format Patent
LanguageEnglish
Published 26.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the invention provide a method, structure, service, etc. for variable overlap of dummy shapes for improved rapid thermal anneal uniformity. A method of providing uniform temperatures across a limited region of a wafer during a rapid thermal anneal process comprises determining a first reflectivity in a first portion of the limited region by measuring a density of first structures in the first portion. Next, the method determines a second reflectivity in a second portion of the limited region by measuring a density of second structures in the second portion. Specifically, the first structures comprise diffusion fill shapes and polysilicon conductor fill shapes (non-active dummy structures); and, the second structures comprise active circuit structures.
Bibliography:Application Number: US20060422622