Composition for the removal of sidewall residues

A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

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Bibliographic Details
Main Authors RHEIN RUDOLF, BOERNER MARC, ARNOLD LUCIA, MELLIES RAIMUND, BARKO ANDREA
Format Patent
LanguageEnglish
Published 12.05.2009
Subjects
ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES
APPARATUS SPECIALLY ADAPTED THEREFOR
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CANDLES
CHEMISTRY
CINEMATOGRAPHY
DETERGENT COMPOSITIONS
DETERGENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
FATTY ACIDS THEREFROM
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
RECOVERY OF GLYCEROL
RESIN SOAPS
SEMICONDUCTOR DEVICES
SOAP OR SOAP-MAKING
USE OF SINGLE SUBSTANCES AS DETERGENTS
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Summary:A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.
Bibliography:Application Number: US20080133532