Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system

A semiconductor laser device includes an n-type cladding layer 103 made of n-type (Al0.3Ga0.7)0.5In0.5P, an undoped active layer 104 and a first p-type cladding layer 105 made of p-type (Al0.3Ga0.7)0.5In0.5P. These layers are successively stacked in bottom-to-top order. The active layer 104 has a mu...

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Bibliographic Details
Main Author UKAI TSUTOMU
Format Patent
LanguageEnglish
Published 12.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A semiconductor laser device includes an n-type cladding layer 103 made of n-type (Al0.3Ga0.7)0.5In0.5P, an undoped active layer 104 and a first p-type cladding layer 105 made of p-type (Al0.3Ga0.7)0.5In0.5P. These layers are successively stacked in bottom-to-top order. The active layer 104 has a multi-quantum well structure composed of a first optical guide layer of undoped Al0.4Ga0.6As, a layered structure in which well layers of undoped GaAs and barrier layers of undoped Al0.4Ga0.6As are alternately formed, and a second optical guide layer of undoped Al0.4Ga0.6As. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.
Bibliography:Application Number: US20070826810