Amorphous silicon thin-film transistors and methods of making the same

The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention provides transistors having a structure based on a channel passivated structure wherein the amorphous...

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Bibliographic Details
Main Authors SARMA KALLURI R, CHANLEY CHARLES S
Format Patent
LanguageEnglish
Published 05.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention provides transistors having a structure based on a channel passivated structure wherein the amorphous silicon layer thickness and the channel length can be optimized. In another aspect of the present invention thin-film transistor structures that include a contact enhancement layer that can provide a low threshold voltage are provided.
Bibliography:Application Number: US20040932478