Production and packaging control for repaired integrated circuits

A method for reducing the scrap rate of fuse structures after laser repairing is provided. The method includes providing a semiconductor wafer comprising integrated circuits, performing a yield test on the semiconductor wafer to determine defective circuits, predetermining a wavelength limit, and ke...

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Bibliographic Details
Main Authors YEOU LONG SHENG, TSENG SHU-JUNG, YAU YOU-WEN, CHU CHIEN-WU, SU CHI CHANG
Format Patent
LanguageEnglish
Published 21.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method for reducing the scrap rate of fuse structures after laser repairing is provided. The method includes providing a semiconductor wafer comprising integrated circuits, performing a yield test on the semiconductor wafer to determine defective circuits, predetermining a wavelength limit, and keeping the semiconductor wafer away from lights having wavelengths lower than the wavelength limit. The defects on the semiconductors wafer are repaired by burning laser fuses. For copper-based fuse structures, the wavelength limit is about 550 nm.
Bibliography:Application Number: US20060413468