Method for fabricating semiconductor device with bulb shaped recess gate pattern
A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate b...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
24.03.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate beneath the first recess to form a second recess, the second recess being wider and more rounded than the first recess; removing the spacer; and forming a gate pattern having a first portion buried into the first and second recesses and a second portion projecting over the substrate. |
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Bibliography: | Application Number: US20060411891 |