Method for fabricating semiconductor device with bulb shaped recess gate pattern

A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate b...

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Bibliographic Details
Main Authors KIM SUK-KI, CHO YONG-TAE
Format Patent
LanguageEnglish
Published 24.03.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate beneath the first recess to form a second recess, the second recess being wider and more rounded than the first recess; removing the spacer; and forming a gate pattern having a first portion buried into the first and second recesses and a second portion projecting over the substrate.
Bibliography:Application Number: US20060411891