Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom

• Main Authors: HAKEY MARK C, HOLMES STEVEN J, HORAK DAVID V, FURUKAWA TOSHIHARU, NESBIT LARRY A, KOBURGER, III CHARLES W
• Format: Patent
• Language: English
• Published: 17.03.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates generally to a method for fabricating oxygen-implanted semiconductors, and more particularly to a method for fabricating oxygen-implanted silicon-on-insulation ("SOI") type semiconductors by cutting-up regions into device-sized pieces prior to the SOI-oxidation process. The process sequence to make SOI is modified so that the implant dose may be reduced and relatively long and high temperature annealing process steps may be shortened or eliminated. This simplification may be achieved if, after oxygen implant, the wafer structure is sent to pad formation, and masking and etching. After the etching, annealing or oxidation process steps may be performed to create the SOI wafer.