Integrated transistor module and method of fabricating same
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land wit...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
10.03.2009
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land. |
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Bibliography: | Application Number: US20040876248 |