Radiation-emitting semiconducting body with confinement layer

A radiation-emitting semiconductor with a radiation-emitting active layer having InxAlyGa1-x-yP (0<=x<=1, 0<=y<=1, 0<=x+y<=1) is described. The active layer is arranged between a first confinement layer and a second confinement layer. The layers can contain InxAlyGa1-x-yPuN1-u (0&l...

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Bibliographic Details
Main Authors LINDER NORBERT, PIETZONKA INES
Format Patent
LanguageEnglish
Published 24.02.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A radiation-emitting semiconductor with a radiation-emitting active layer having InxAlyGa1-x-yP (0<=x<=1, 0<=y<=1, 0<=x+y<=1) is described. The active layer is arranged between a first confinement layer and a second confinement layer. The layers can contain InxAlyGa1-x-yPuN1-u (0<=x<=1, 0<=y<=1, 0<=x+y<=1 and 0<=u<1), BzInxAlyGa1-x-y-zPuN1-u (0<=x<=1, 0<=y<=1, 0<z<=1, 0<=x+y+z<=1 and 0<=u<1) or a II-VI semiconductor material.
Bibliography:Application Number: US20040956728