Reducing read disturb for non-volatile storage

A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source...

Full description

Saved in:
Bibliographic Details
Main Authors LUTZE JEFFREY, WAN JUN, FONG YUPIN
Format Patent
LanguageEnglish
Published 04.11.2008
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.
Bibliography:Application Number: US20080021741