Bipolar transistor with collector having an epitaxial Si:C region

• Main Authors: KRISHNASAMY RAJENDRAN, STRICKER ANDREAS D, KHATER MARWAN H, FREEMAN GREGORY G, SCHONENBERG KATHRYN T
• Format: Patent
• Language: English
• Published: 28.10.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.