Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film

• Main Authors: KANG SUNGKWAN, LEE JONGWOOK, SON YONG-HOON, SHIN YUGYUN
• Format: Patent
• Language: English
• Published: 07.10.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.