Liquid metal ion gun

An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles...

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Bibliographic Details
Main Authors IZAWA SHIGERU, ISHITANI TOHRU, KAGA HIROYASU, MADOKORO YUICHI, UMEMURA KAORU
Format Patent
LanguageEnglish
Published 02.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OF CHEMICAL ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
IRRADIATION DEVICES
MEASURING
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
RADIOACTIVE SOURCES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
TESTING
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Summary:An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
Bibliography:Application Number: US20070730803