Vertical cavity surface emitting laser diode and process for producing the same

A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture d...

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Bibliographic Details
Main Authors UEKI NOBUAKI, MUKOYAMA NAOTAKA
Format Patent
LanguageEnglish
Published 29.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.
Bibliography:Application Number: US20050159192