Method and apparatus for in-situ film stack processing

Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing cha...

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Bibliographic Details
Main Authors MERRY WALTER R, SHANG QUANYUAN, WHITE JOHN M
Format Patent
LanguageEnglish
Published 15.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DECORATIVE ARTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MOSAICS
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-LINEAR OPTICS
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PAPERHANGING
PERFORMING OPERATIONS
PHYSICS
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
TARSIA WORK
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
TRANSPORTING
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Summary:Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
Bibliography:Application Number: US20040821723