Method of fabricating microelectronic device using super critical fluid

Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering...

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Bibliographic Details
Main Authors OH JUN-HWAN, HAN SANGOL
Format Patent
LanguageEnglish
Published 01.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.
Bibliography:Application Number: US20050033712