Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate
A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate e...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
11.03.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate electrode comprises silicon. Nanoclusters are present in the first gate electrode. A peripheral transistor area is formed devoid of nanoclusters. |
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Bibliography: | Application Number: US20060376411 |