Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate

A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate e...

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Bibliographic Details
Main Authors CHANG KO-MIN, STEIMLE ROBERT F, PRINZ ERWIN J
Format Patent
LanguageEnglish
Published 11.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate electrode comprises silicon. Nanoclusters are present in the first gate electrode. A peripheral transistor area is formed devoid of nanoclusters.
Bibliography:Application Number: US20060376411