Method for fabricating ferroelectric capacitive element and ferroelectric capacitive element

A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first ferroelectric film including bismuth in a first concentration on the lower electrode; forming a second ferroel...

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Bibliographic Details
Main Author TATSUNARI TOSHITAKA
Format Patent
LanguageEnglish
Published 04.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first ferroelectric film including bismuth in a first concentration on the lower electrode; forming a second ferroelectric film including bismuth in a second concentration on the first ferroelectric film; performing annealing after forming the first ferroelectric film and the second ferroelectric film; and forming an upper electrode made of a second conductive film on the second ferroelectric film after the annealing. The first conductive film is a metal film more easily etched than a platinum film, and the second ferroelectric film is formed in such a manner that the second concentration is lower than the first concentration before the annealing.
Bibliography:Application Number: US20050081815