Silicon wafer etching process and composition

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

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Bibliographic Details
Main Authors DOANE THOMAS E, STINSON MARK G, BJELOPAVLIC MICK, SCHMIDT JUDITH A, ERK HENRY F, CAPSTICK JAMES R, GRABBE ALEXIS, ZHANG GUOQIANG (DAVID), VERMEIRE JOZEF G
Format Patent
LanguageEnglish
Published 29.01.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
Bibliography:Application Number: US20050152362