Memory device with improved data retention

The present memory device includes a first electrode, a passive layer, for example Cu2S, on the first electrode, an active layer on the passive layer and including an azole compound, and a second electrode on the active layer. The azoles compound may be for example benzotriazole or 1,2,4-triazole. T...

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Bibliographic Details
Main Author AVANZINO STEVEN
Format Patent
LanguageEnglish
Published 11.12.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present memory device includes a first electrode, a passive layer, for example Cu2S, on the first electrode, an active layer on the passive layer and including an azole compound, and a second electrode on the active layer. The azoles compound may be for example benzotriazole or 1,2,4-triazole. The active layer may also include Cu2O.
Bibliography:Application Number: US20050089707