Memory device with improved data retention
The present memory device includes a first electrode, a passive layer, for example Cu2S, on the first electrode, an active layer on the passive layer and including an azole compound, and a second electrode on the active layer. The azoles compound may be for example benzotriazole or 1,2,4-triazole. T...
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Main Author | |
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Format | Patent |
Language | English |
Published |
11.12.2007
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Subjects | |
Online Access | Get full text |
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Summary: | The present memory device includes a first electrode, a passive layer, for example Cu2S, on the first electrode, an active layer on the passive layer and including an azole compound, and a second electrode on the active layer. The azoles compound may be for example benzotriazole or 1,2,4-triazole. The active layer may also include Cu2O. |
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Bibliography: | Application Number: US20050089707 |