Phase change memory device and method of programming the same

A phase change memory device includes a memory cell having a phase change material, a write driver which supplies a step-down set current to the memory cell, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit wh...

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Bibliographic Details
Main Authors LEE WON-SEOK, CHO BEAK-HYUNG, SEO JONG-SOO
Format Patent
LanguageEnglish
Published 13.11.2007
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A phase change memory device includes a memory cell having a phase change material, a write driver which supplies a step-down set current to the memory cell, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit which controls a duration of the step-down set current supplied by the write driver.
Bibliography:Application Number: US20050319284