Method of depositing an amorphous carbon layer

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ...

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Bibliographic Details
Main Authors FAIRBAIRN KEVIN, RICE MICHAEL, NGAI CHRISTOPHER S, LATCHFORD IAN SCOT, WANG YUXIANG MAY, WEIDMAN TIMOTHY, BENCHER CHRISTOPHER DENNIS
Format Patent
LanguageEnglish
Published 29.05.2007
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Summary:A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
Bibliography:Application Number: US20040019860