Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxyg...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
10.04.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor. |
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Bibliography: | Application Number: US20030372727 |