Method of operating a memory at high speed using a cycle ready status output signal

A self-clocking memory device comprises a memory array, a memory input circuit, and a memory control circuit. The memory input circuit is operable to receive an input clock signal and generate a memory operation initiation signal in response thereto, while the memory control circuit is operable to r...

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Bibliographic Details
Main Authors SHEFFIELD BRYAN D, AGRAWAL VIKAS K, BADI ERIC L, SPRIGGS STEPHEN W
Format Patent
LanguageEnglish
Published 03.04.2007
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A self-clocking memory device comprises a memory array, a memory input circuit, and a memory control circuit. The memory input circuit is operable to receive an input clock signal and generate a memory operation initiation signal in response thereto, while the memory control circuit is operable to receive the memory operation initiation signal and generate one or more control signals to initiate a memory operation in response thereto. The memory control circuit is further operable to identify completion of the memory operation and generate a cycle ready strobe signal in response thereto. The memory input circuit receives the cycle ready strobe signal as an input and generates a next memory operation initiation signal in response thereto for initiation of a next memory operation.
Bibliography:Application Number: US20030663144