Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer

The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer ( 14 ) that contains for example praseodymium oxide is deposited onto a prepared wafer (...

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Bibliographic Details
Main Authors LIU JING PING, GORYACHKO ANDRIY, KRUEGER, LEGAL REPRESENTATIVE ELENA, KURPS RAINER, OSTEN HANS-JOERG
Format Patent
LanguageEnglish
Published 27.03.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer ( 14 ) that contains for example praseodymium oxide is deposited onto a prepared wafer ( 12 ). A silicon layer ( 16 ) and on top of said silicon layer a cover layer ( 18 ) is deposited onto the metal oxide layer ( 14 ), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer ( 16 ) and the metal oxide layer ( 14 ) are converted to a metal silicide layer in lateral sections ( 20, 22 ) in which the cover layer ( 18 ) was previously removed.
Bibliography:Application Number: US20050479300