Sulfonamide compound, polymer compound, resist material and pattern formation method

A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl gr...

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Bibliographic Details
Main Authors IMORI HIROKAZU, UEDA MITSURU, KISHIMURA SHINJI, SASAGO MASARU, FUKUHARA TOSHIAKI, ENDO MASAYUKI
Format Patent
LanguageEnglish
Published 23.01.2007
Subjects
ACYCLIC OR CARBOCYCLIC COMPOUNDS
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
Bibliography:Application Number: US20040932316