Laminated silicate glass layer etch stop method for fabricating microelectronic product

A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer whe...

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Bibliographic Details
Main Authors CHEN DIAN-HAU, CHEN YEN-MING, TSENG HUANI, KUO KANG-MIN, LEE YU-HUA, LAI CHIA-HUNG
Format Patent
LanguageEnglish
Published 09.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer when fabricating a complementary metal oxide semiconductor device.
Bibliography:Application Number: US20020278968