Transfer-molded power device and method for manufacturing transfer-molded power device

A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t 1 of the chip and the thickness t 2 of one of heat sinks that is joined to the chip u...

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Main Authors HIRANO NAOHIKO, NAKASE YOSHIMI, YAGI KENJI, OOKURA YASUSHI, MAMITSU KUNIAKI, FUKUDA YUTAKA, NOMURA KAZUHITO, TESHIMA TAKANORI
Format Patent
LanguageEnglish
Published 05.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t 1 of the chip and the thickness t 2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t 2 /t 1 >=5. Furthermore, the thermal expansion coefficient alpha 1 of the heat sinks and the thermal expansion coefficient alpha 2 of the mold resin satisfy the equation of 0.5<=alpha 2/alpha1 <=1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra<=500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.
Bibliography:Application Number: US20020201556