Stabilizing fluorine etching of low-k materials

Damascene processing is implemented with dielectric barrier films ( 50, 90, 91 ) for improved step coverage and reduced contact resistance. Embodiments include the use of two different dielectric films ( 50, 31 ) to avoid misalignment problems. Embodiments further include dual damascene ( 100 A, 100...

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Bibliographic Details
Main Authors ERB DARRELL M, WANG FEI, YANG KAI
Format Patent
LanguageEnglish
Published 07.11.2006
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Summary:Damascene processing is implemented with dielectric barrier films ( 50, 90, 91 ) for improved step coverage and reduced contact resistance. Embodiments include the use of two different dielectric films ( 50, 31 ) to avoid misalignment problems. Embodiments further include dual damascene ( 100 A, 100 B) processing using Cu metallization ( 100 ).
Bibliography:Application Number: US20010817056