Stabilizing fluorine etching of low-k materials

Damascene processing is implemented with dielectric barrier films ( 50, 90, 91 ) for improved step coverage and reduced contact resistance. Embodiments include the use of two different dielectric films ( 50, 31 ) to avoid misalignment problems. Embodiments further include dual damascene ( 100 A, 100...

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Bibliographic Details
Main Authors ERB DARRELL M, WANG FEI, YANG KAI
Format Patent
LanguageEnglish
Published 07.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Damascene processing is implemented with dielectric barrier films ( 50, 90, 91 ) for improved step coverage and reduced contact resistance. Embodiments include the use of two different dielectric films ( 50, 31 ) to avoid misalignment problems. Embodiments further include dual damascene ( 100 A, 100 B) processing using Cu metallization ( 100 ).
Bibliography:Application Number: US20010817056