Method of estimating substrate temperature

• Main Authors: OHNISHI TERUHITO, SAITOH TOHRU, NOZAWA KATSUYA
• Format: Patent
• Language: English
• Published: 31.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MEASURING; MEASURING QUANTITY OF HEAT; MEASURING TEMPERATURE; PHYSICS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; TESTING; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR

A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer ( 103 ) on a SiGe layer ( 102 ) formed on a substrate for temperature estimation ( 101 ) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer ( 103 ) and the substrate temperature of the substrate for temperature estimation.