Semiconductor devices and methods of manufacturing such semiconductor devices

• Main Authors: SMITH PATRICIA BEAUREGARD, LU JIONG-PING
• Format: Patent
• Language: English
• Published: 05.09.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate ( 102 ), forming a dielectric layer ( 104 ) over the semiconductor substrate ( 102 ), and etching a trench structure ( 106 ) or a via structure ( 106 ) in the dielectric layer ( 104 ) to expose a portion of a surface of the semiconductor substrate ( 102 ). The method also includes the steps of treating a surface ( 104 a) of the dielectric layer ( 104 ) with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer ( 110 ) over the dielectric layer ( 104 ). Moreover, the adhesion solution chemically interacts with the surface ( 104 a) of the dielectric layer ( 104 ) and enhances or increases adhesion between dielectric layer ( 104 ) and diffusion barrier layer ( 110 ).