Semiconductor devices and methods of manufacturing such semiconductor devices
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate ( 102 ), forming a dielectric layer ( 104 ) over the semiconductor substrate ( 102 ), and etching a trench structure ( 106 ) or a via structure ( 106 ) in the dielectric layer ( 104 ) to expose...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
05.09.2006
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate ( 102 ), forming a dielectric layer ( 104 ) over the semiconductor substrate ( 102 ), and etching a trench structure ( 106 ) or a via structure ( 106 ) in the dielectric layer ( 104 ) to expose a portion of a surface of the semiconductor substrate ( 102 ). The method also includes the steps of treating a surface ( 104 a) of the dielectric layer ( 104 ) with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer ( 110 ) over the dielectric layer ( 104 ). Moreover, the adhesion solution chemically interacts with the surface ( 104 a) of the dielectric layer ( 104 ) and enhances or increases adhesion between dielectric layer ( 104 ) and diffusion barrier layer ( 110 ). |
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Bibliography: | Application Number: US20030342013 |