Formation of controlled sublithographic structures

A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.

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Bibliographic Details
Main Authors DOBUZINSKY DAVID M, BEINTNER JOCHEN C, PANDA SIDDHARTHA
Format Patent
LanguageEnglish
Published 08.08.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.
Bibliography:Application Number: US20040711683