Method for forming film
In a deposition method according to the present invention, a substrate ( 10 ) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the s...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
13.06.2006
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Subjects | |
Online Access | Get full text |
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Summary: | In a deposition method according to the present invention, a substrate ( 10 ) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST 2 ). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST 3 ). By carrying out the initiation step (ST 2 ) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition. |
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Bibliography: | Application Number: US20030333963 |