Light emitting diodes with improved light extraction efficiency

Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region pref...

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Main Authors MUELLER-MACH REGINA B, CAMRAS MICHAEL D, SNYDER WAYNE L, KRAMES MICHAEL R, STERANKA FRANK M, TROTTIER TROY A, TABER ROBERT C, UEBBING JOHN J, POCIUS DOUGLAS W, LOWERY CHRISTOPHER H, MUELLER GERD O
Format Patent
LanguageEnglish
Published 30.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
Bibliography:Application Number: US20000660317