Semiconductor integrated circuit device and method of manufacturing the same

A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 mum, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solde...

Full description

Saved in:
Bibliographic Details
Main Authors KANEDA TSUYOSHI, SUZUKI HIROMICHI, MIYAKI YOSHINORI
Format Patent
LanguageEnglish
Published 02.05.2006
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 mum, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin.
Bibliography:Application Number: US20040890321