Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane

A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electro...

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Bibliographic Details
Main Authors SMITH LOWELL SCOTT, LOGAN JOHN ROBERT, MILLS DAVID MARTIN, TIAN WEING, FORTIN JEFFREY BERNARD
Format Patent
LanguageEnglish
Published 02.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FOR PERFORMING MECHANICAL WORK IN GENERAL
GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICALVIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
Bibliography:Application Number: US20040023252