Minimally-patterned semiconductor devices for display applications

A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The se...

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Bibliographic Details
Main Authors KAZLAS PETER T, DRZAIC PAUL S, AMUNDSON KARL R, CHEN YU, DUTHALER GREGG M
Format Patent
LanguageEnglish
Published 18.04.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.
Bibliography:Application Number: US20000565413