Method of manufacturing a flash memory cell capable of increasing a coupling ratio

A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to...

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Bibliographic Details
Main Authors AHN JUNG RYUL, KIM JUM SOO, LEE YOUNG BOK, JUNG SUNG MUN, SHIN YOUNG KI
Format Patent
LanguageEnglish
Published 21.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.
Bibliography:Application Number: US20040004301