Method of forming suspended transmission line structures in back end of line processing

A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of...

Full description

Saved in:
Bibliographic Details
Main Authors GROVES ROBERT A, TRETIAKOV YOURI V, VOLANT RICHARD P, VAED KUNAL, CHINTHAKINDI ANIL K
Format Patent
LanguageEnglish
Published 28.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
SEMICONDUCTOR DEVICES
WAVEGUIDES
Online AccessGet full text

Cover

More Information
Summary:A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.
Bibliography:Application Number: US20040709357